Substrat



Aluminum nitride AlN substrate characteristics


Aluminum nitride
 (AlN) is a nitride of aluminum. Its wurtzite phase (w-AlN) is a wide band gap (6.2eV) semiconductor material, giving it potential application for deep ultraviolet optoelectronics. AlN is a material having also a high oxidation and abrasion resistance.

  • Thickness : 0,5 to 1,5 mm
  • Maxi Format : 138 x 190,5 mm



Aluminum nitride AlN substrate characteristics

CHARACTERISTICS

AlN

Colour

/

Grey

Density

g/cm3

3,33

Surface roughness Rmax

µm

0,6

Particle size

µm

4~6

Water absorption

%

0

Young modulus

Gpa

320

Flexural strength

N/mm²

360

Thermal conductivity 

W/(K.m) 

180

Specific Heat

J/kg.K

738

Coef. of Thermal Expansion 20-300°C

10-6/ K-1

4,7

Coef. of Thermal Expansion 20-600°C

10-6/ K-1

5,2

Coef. of Thermal Expansion 20-1000°C

10-6/ K-1

5,6

Resistivity at 20°C

Ohm.µm

1013

Dielectric Strength (Thickness 1mm)

kV/mm

16



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