Aluminium nitride AlN Substrate
Aluminum nitride AlN substrate characteristics
Aluminum nitride (AlN) is a nitride of aluminum. Its wurtzite phase (w-AlN) is a wide band gap (6.2eV) semiconductor material, giving it potential application for deep ultraviolet optoelectronics. AlN is a material having also a high oxidation and abrasion resistance.
- Thickness : 0,5 to 1,5 mm
- Maxi Format : 138 x 190,5 mm
Aluminum nitride AlN substrate characteristics
|
CHARACTERISTICS |
AlN |
|
|
Colour |
/ |
Grey |
|
Density |
g/cm3 |
3,33 |
|
Surface roughness Rmax |
µm |
0,6 |
|
Particle size |
µm |
4~6 |
|
Water absorption |
% |
0 |
|
Young modulus |
Gpa |
320 |
|
Flexural strength |
N/mm² |
360 |
|
Thermal conductivity |
W/(K.m) |
180 |
|
Specific Heat |
J/kg.K |
738 |
|
Coef. of Thermal Expansion 20-300°C |
10-6/ K-1 |
4,7 |
|
Coef. of Thermal Expansion 20-600°C |
10-6/ K-1 |
5,2 |
|
Coef. of Thermal Expansion 20-1000°C |
10-6/ K-1 |
5,6 |
|
Resistivity at 20°C |
Ohm.µm |
1013 |
|
Dielectric Strength (Thickness 1mm) |
kV/mm |
16 |